Carrier recombination in 1.3 m GaAsSb/GaAs quantum well lasers
نویسندگان
چکیده
In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAs/GaAsP barrier layers and, to a lesser extent, to Auger recombination. © 2006 American Institute of Physics. DOI: 10.1063/1.2369649
منابع مشابه
The influence of growth conditions on carrier recombination mechanisms in 1.3μm GaAsSb/GaAs quantum well lasers
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